Paul Nicollian

Paul E. Nicollian received the B.S. degree in physics from The Pennsylvania State University, University Park in 1983, the M.S. degree in physics from The University of Texas, Dallas in 1990, and the Ph.D. degree in electrical engineering from The University of Twente, Enschede, The Netherlands in 2007.

He has 35+ years of experience in the semiconductor industry. He was employed by United Technologies Mostek Corporation in 1984. He joined Texas Instruments in 1985 and was elected Senior Member of the Technical Staff in 2001. He retired from Texas Instruments in 2012 after 28 years of service. In 2013, he formed the consulting firm Semiconductor Reliability Incorporated. His research interests include the reliability physics of dielectric materials and related active and passive device reliability phenomena that are important in advanced semiconductor technologies, including TDDB, NBTI, PBTI, CHC, BEOL dielectrics, plasma charging (antenna) effects, FPGA amorphous silicon anti-fuse (Schottky Barrier) instabilities, Beyond Moore's Law technologies, and Silcon Carbide devices. He has authored or co-authored approximately 40 publications.

​Dr. Nicollian has served on the International Electron Devices Meeting (IEDM) and the IEEE International Reliability Physics Symposium (IRPS) Technical Program Committees and has chaired or co-chaired several IRPS technical program subcommittees. He was the recipient of the 2000 IRPS Best Paper Award. Dr. Nicollian is a Senior Member of the IEEE.